Surface modification of a-Si:H with a scanning tunneling microscope operated in air

Journal Article · Wed Mar 01 00:00:00 EST 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342876· OSTI ID:6439086

Jahanmir, J; West, P E; Hsieh, S; Rhodin, T N

A scanning tunneling microscope was applied to the lithographic microprocessing of amorphous materials in air. Phase transformations were induced in the thin-film a-Si:H on silicon by low-energy electron irradiation. Electronic characterization of the surface before and after the phase transformation indicated a change in the local conductivity directly below the tip. Submicrometer lines were formed on these thin films by application of multiple, 10-V, 35-..mu..s voltage pulses between the tip and the sample. The lines were imaged with the STM in the imaging mode. The linewidths written on a-Si:H corresponded to the average tip radii used in the experiments, e.g., approximately 500--5000 A.

• Research Organization: QuanScan, Inc., Pasadena, California 91101
• OSTI ID: 6439086
• Journal Information: J. Appl. Phys.; (United States), Vol. 65:5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
AMORPHOUS STATE
ELECTRIC CONDUCTIVITY
ELECTRON COLLISIONS
ELECTRON MICROSCOPY
ETCHING
PHASE TRANSFORMATIONS
SURFACE TREATMENTS
THIN FILMS
COLLISIONS
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
MICROSCOPY
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMIMETALS
SURFACE FINISHING
360605* - Materials- Radiation Effects