Modeling of silicon etching in CF sub 4 /O sub 2 and CF sub 4 /H sub 2 plasmas
- Dept. of Chemical Engineering, Univ. of Texas at Austin, Austin, TX (US)
- Morgantown Energy Technology Center, Morgantown, WV (US)
A one-dimensional radial flow reactor model that includes fairly detailed free radical gas-phase chemistry has been developed for the etching of silicon in CF{sub 4}/O{sub 2} and CF{sub 4}/H{sub 2} plasmas. Attention has been restricted to transport and reaction of neutral species. The model equations were solved by orthogonal collocation. The sensitivities of the model predictions to flow rate, inlet gas composition, electron density, silicon loading, and other factors have been examined. The major loss path for fluorine atoms is different in CF{sub 4}/O{sub 2} and CF{sub 4}/H{sub 2} systems, and this results in significant qualitative differences in the parametric sensitivities of the two systems.
- OSTI ID:
- 6436199
- Journal Information:
- Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:7; ISSN 0013-4651; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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74 ATOMIC AND MOLECULAR PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOM TRANSPORT
CARBON COMPOUNDS
CARBON FLUORIDES
CHEMICAL COMPOSITION
ELECTRON DENSITY
ELEMENTS
ENERGY LOSSES
ETCHING
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HYDROGEN
LATTICE PARAMETERS
LOSSES
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
ONE-DIMENSIONAL CALCULATIONS
OXYGEN
PHASE STUDIES
PLASMA
RADIATION TRANSPORT
SEMIMETALS
SILICON
SOLID-STATE PLASMA
SURFACE FINISHING