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Modeling of silicon etching in CF sub 4 /O sub 2 and CF sub 4 /H sub 2 plasmas

Journal Article · · Journal of the Electrochemical Society; (USA)
OSTI ID:6436199
;  [1];  [2]
  1. Dept. of Chemical Engineering, Univ. of Texas at Austin, Austin, TX (US)
  2. Morgantown Energy Technology Center, Morgantown, WV (US)

A one-dimensional radial flow reactor model that includes fairly detailed free radical gas-phase chemistry has been developed for the etching of silicon in CF{sub 4}/O{sub 2} and CF{sub 4}/H{sub 2} plasmas. Attention has been restricted to transport and reaction of neutral species. The model equations were solved by orthogonal collocation. The sensitivities of the model predictions to flow rate, inlet gas composition, electron density, silicon loading, and other factors have been examined. The major loss path for fluorine atoms is different in CF{sub 4}/O{sub 2} and CF{sub 4}/H{sub 2} systems, and this results in significant qualitative differences in the parametric sensitivities of the two systems.

OSTI ID:
6436199
Journal Information:
Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 137:7; ISSN 0013-4651; ISSN JESOA
Country of Publication:
United States
Language:
English

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