Nitrogen and fluorine ion implantation in In{sub {ital x}}Ga{sub 1{minus}{ital x}}N
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
- University of Florida, Gainesville, Florida 32611 (United States)
Implantation of N{sup +} ions in {ital n}-type In{sub {ital x}}Ga{sub 1{minus}{ital x}}N (0.37{le}x{le}1.0) produces maximum increases in sheet resistance of 50--100 times upon annealing in the range of 400--600 {degree}C. The dominant deep state introduced by implantation and annealing have ionization energies of {similar_to}0.35--0.39 eV and therefore are relatively high in the band gap of the InGaN. There was no evidence for chemical deep levels associated with the implanted N{sup +} or F{sup +}. The implant isolation behavior of {ital n}-type InGaN appears analogous to that of InP and InGaAs. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 64321
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 66; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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