Many-body Coulomb effects in room-temperature II--VI quantum well semiconductor lasers

Journal Article · Mon May 29 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114258· OSTI ID:64319

Chow, W W ^[1]; Koch, S W ^[2]

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1. Semiconductor Physics Department, Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)
2. Department of Physics and Materials Sciences Center, Philipps University, 35032 Marburg (Germany)

This letter investigates the gain medium properties in II--VI blue-green quantum well semiconductor lasers, including band structure and carrier interactions in the electron-hole plasma are found to be significantly more important than in infrared III--V lasers. In particular, the interband Coulombic enhancement of the optical transitions, together with a band gap renormalization result in an increase in gain and a reduction in the antiguiding or linewidth enhancement factor. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 64319
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 66; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
COLLECTIVE EXCITATIONS
COULOMB FIELD
ELECTRONIC STRUCTURE
EMISSION SPECTRA
GAIN
HETEROJUNCTIONS
LINE WIDTHS
MANY-BODY PROBLEM
SEMICONDUCTOR LASERS
SUPERLATTICES