Study and development of tunable, single mode AlGaAs/GaAs lasers

Technical Report · Sat Sep 01 00:00:00 EDT 1990

DOI:https://doi.org/10.2172/6427145· OSTI ID:6427145

Yu, P K.L.; Liu, J C ^[1]

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1. California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

• Research Organization: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6427145
• Report Number(s): UCRL-CR-104625; ON: DE91001684
• Country of Publication: United States
• Language: English

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426002* - Engineering- Lasers & Masers- (1990-)