Explanation of low-frequency relative intensity noise in semiconductor lasers

Journal Article · Mon Aug 27 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103385· OSTI ID:6427093

Su, C B ^[1]; Schlafer, J; Lauer, R B ^[2]

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1. Texas A M University, Institute for Solid State Engineering, Department of Electrical Engineering, College Station, TX (USA)
2. GTE Laboratories Incorporated, Waltham, MA (USA)

For the first time, the enhanced low-frequency relative intensity noise characteristics of semiconductor lasers is explained. It is shown, by multimode rate equation analysis, that the enhanced low-frequency noise is caused by coupling between longitudinal modes which can renormalize the resonance frequency of the individual modes to very low values. It is further shown that a single-mode laser will also exhibit enhanced low-frequency noise unless the side-mode suppression is high.

• OSTI ID: 6427093
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:9; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

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426002* -- Engineering-- Lasers & Masers-- (1990-)
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