Low-frequency intensity noise in semiconductor lasers
- Department of Physics, Montana State University, Bozeman, Montana 59717 (United States)
The low-frequency intensity noise at 25 MHz of a Fabry{endash}Perot semiconductor laser is measured as a function of injection current. All the measurements are taken at room temperature and the laser is operated with a commercial current source (the conditions under which laser diodes are often used). At the highest injection current of twice threshold, the intensity noise is 5.5 dB above the shot-noise limit. When the longitudinal side mode suppression of the laser is 20 dB or larger, the intensity noise is modeled adequately by an expression derived from the single-mode, small-signal, linearized, semiclassical rate equations. All the parameters used in the theory are derived or referenced. {copyright} {ital 1996 Optical Society of America.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 477019
- Journal Information:
- Applied Optics, Journal Name: Applied Optics Journal Issue: 33 Vol. 35; ISSN 0003-6935; ISSN APOPAI
- Country of Publication:
- United States
- Language:
- English
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