Picosecond relaxation of hot-carrier distributions in GaAs/GaAsP strained-layer superlattices

Journal Article · Mon Jul 06 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98883· OSTI ID:6422426

Edelstein, D C; Tang, C L; Nozik, A J

We have studied the energy relaxation of hot carriers in GaAs/GaAs/sub 0.5/P/sub 0.5/ strained-layer superlattices following picosecond photoexcitation. A significant enhancement of highly excited carrier distribution lifetimes over those of bulk GaAs was observed at cryogenic as well as room temperatures. These results support the explanation of photocurrent results reported for solar photoelectrodes made with these structures. Comparison results were also obtained for a GaAs/AlGaAs multiple quantum well structure which showed even longer hot-carrier lifetimes.

• Research Organization: Cornell University, Ithaca, New York 14853
• OSTI ID: 6422426
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CHARGE CARRIERS
CURRENTS
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
JUNCTIONS
LIFETIME
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCURRENTS
PNICTIDES
RELAXATION
SEMICONDUCTOR JUNCTIONS
SUPERLATTICES