Low-threshold continuous-wave room-temperature operation of Al sub x Ga sub 1 minus x As/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO sub 2 back coating

Journal Article · Mon Sep 17 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103519· OSTI ID:6420274

Egawa, T; Tada, H; Kobayashi, Y; Soga, T; Jimbo, T; Umeno, M ^[1]

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1. Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 (Japan)

We demonstrate the first room-temperature low-threshold continuous-wave (cw) operation of Al{sub 0.3}Ga{sub 0.7}As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates using techniques of SiO{sub 2} back coating and thermal cycle annealing. The all-MOCVD-grown SQW lasers on GaAs/Si with etch pit density of 1.5{times} 10{sup 7} cm{sup {minus}2} have threshold current as low as 55 mA (1.41 kA/cm{sup 2}) under cw at room temperature. The SiO{sub 2} back coating is effective to obtain excellent current-voltage characteristics. Thermal cycle annealing is also found to improve the crystallinity of GaAs/Si and to contribute to room-temperature cw operation of the lasers on Si substrates.

• OSTI ID: 6420274
• Journal Information: Applied Physics Letters; (USA), Vol. 57:12; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
ANNEALING
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
OPERATION
ORGANOMETALLIC COMPOUNDS
SUBSTRATES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
HEAT TREATMENTS
LASERS
ORGANIC COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE COATING
426002* - Engineering- Lasers & Masers- (1990-)