An SEU tolerant memory cell derived from fundamental studies of SEU mechanisms in SRAM
Conference
·
OSTI ID:6416657
Novel SEU experiments and advanced simulations are used to prove the feasibility of a new memory hardening scheme. Resistors are configured within the memory cell (1) to voltage divide the longer SEU induced transients at the information nodes, as well as, (2) to delay these transients by the conventional resistive decoupling technique.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); Hughes Research, Carlsbad, CA (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6416657
- Report Number(s):
- SAND-87-0337C; CONF-870724-4; ON: DE87005858
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ELECTRICAL EQUIPMENT
ELECTRICAL TRANSIENTS
ENERGY TRANSFER
EQUIPMENT
HARDENING
LET
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RESISTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
TRANSIENTS
VOLTAGE DROP
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ELECTRICAL EQUIPMENT
ELECTRICAL TRANSIENTS
ENERGY TRANSFER
EQUIPMENT
HARDENING
LET
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RESISTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
TRANSIENTS
VOLTAGE DROP