Tight-Binding Parametrization for Photonic Band Gap Materials

Journal Article · Sat Aug 01 04:00:00 EDT 1998 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.81.1405· OSTI ID:641547

Lidorikis, E; Sigalas, M M; Soukoulis, C M ^[1]; Economou, E N; Soukoulis, C M ^[2]

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1. Ames Laboratory--U.S. DOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)
2. Research Center of Crete-FORTH and Department of Physics, University of Crete, Heraklio, Crete 71110 (Greece)

The idea of the linear combination of atomic orbitals method, well known from the study of electrons, is extended to the classical wave case. The Mie resonances of the isolated scatterer in the classical wave case are analogous to the atomic orbitals in the electronic case. The matrix elements of the two-dimensional tight-binding (TB) Hamiltonian are obtained by fitting to {ital ab initio} results. The transferability of the TB model is tested by reproducing accurately the band structure of different 2D lattices, with and without defects, and at two different dielectric contrasts. {copyright} {ital 1998} {ital The American Physical Society}

• Research Organization: Ames National Laboratory
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 641547
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 7 Vol. 81; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ATOMS
BAND THEORY
BINDING ENERGY
CRYSTALS
ELECTRONS
GRADED BAND GAPS
HAMILTONIANS
MATRIX ELEMENTS
MULTIPLE SCATTERING
PHOTONS