Band structure of silicene in the tight binding approximation

Journal Article · Wed Jul 15 00:00:00 EDT 2015 · Journal of Experimental and Theoretical Physics

DOI:https://doi.org/10.1134/S1063776115060072· OSTI ID:22472193

Nestoklon, M. O.; Yassievich, I. N. ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The electronic structure of silicene is simulated by the tight binding method with the basis sp{sup 3}d{sup 5}s*. The results are in good agreement with ab initio calculations. The effective Hamiltonian of silicene in the vicinity of the Dirac point is constructed by the method of invariants. Silicon atoms in silicene are located in two parallel planes displaced perpendicularly to each other by Δ{sub z}; the energy spectrum essentially depends on this displacement. Using the tight binding technique, the coefficients of the effective Hamiltonian are determined for various values of Δ{sub z}.

• OSTI ID: 22472193
• Journal Information: Journal of Experimental and Theoretical Physics, Journal Name: Journal of Experimental and Theoretical Physics Journal Issue: 1 Vol. 121; ISSN JTPHES; ISSN 1063-7761
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
COMPUTERIZED SIMULATION
ELECTRONIC STRUCTURE
ENERGY SPECTRA
HAMILTONIANS
SILICENE