Microcrystalline silicon growth for heterojunction solar cells

Technical Report · Sun Jan 01 04:00:00 EST 1984

OSTI ID:6407719

Iles, P A; Leung, D C; Fang, P H

A single source of evaporation with B mixed with highly doped Si is used instead of the coevaporation of separate Si and B sources to reduce possible carbon contamination. The results of both the heterojunction or heteroface structures, however, are similar when evaporation is used. The best Voc of the heterojunction is about 460mV and no improvement in Voc in the heteroface structure is observed. Slight Voc degradation occurred. A study of the p m-Si/p c-Si structure showed a negative Voc in many cases. The interface properties between the two materials are such that instead of repelling minority carriers from the substrate carrier, collection actually occurred. Another study of cells made in the part of substrates not covered by n-Si results in performance lower than the controls. This indicates possible substrate degradation in the process.

• Research Organization: Applied Solar Energy Corp., City of Industry, CA (USA)
• OSTI ID: 6407719
• Report Number(s): N-84-28215; NASA-CR-173751; JPL-9950-886
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BORON
CARRIER MOBILITY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
EVAPORATION
FILMS
HETEROJUNCTIONS
JUNCTIONS
MATERIALS
MOBILITY
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS