Ge : Ga photoconductors in low infrared backgrounds

Journal Article · Sun Apr 15 00:00:00 EST 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90861· OSTI ID:6407608

Haller, E E; Hueschen, M R; Richards, P L

We report the development of infrared photoconductive detectors which are background fluctuation noise limited at photon fluxes < or approx. =10/sup 8/ s/sup -1/. The detectors were fabricated from germanium doped with 2 x 10/sup 14/ cm/sup -3/ gallium. Detectors operated in the conventional manner at T=3 K showed significant photoconductive response for wavelengths out to 120 ..mu..m with a minimum NEP of 2.4 x 10/sup -17/ W Hz/sup -1/2/ at 94 ..mu..m. Detectors operated at T=2 K with a uniaxial stress of 60 kgf mm/sup -2/ applied along a (100) direction showed significant response to 205 ..mu..m and gave a minimum NEP of 5.7 x 10/sup 17/ W Hz/sup -1/2/ at approx. =150 ..mu..m. The stressed detectors are four orders of magnitude more sensitive than any previous photoconductor beyond 120 ..mu..m.

• Research Organization: Department of Instrument Techniques, Lawrence Berkeley Laboratory, Berkeley, California 94720
• OSTI ID: 6407608
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 34:8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM
PHOTOCONDUCTIVITY
GERMANIUM
DOPED MATERIALS
EXPERIMENTAL DATA
FLUCTUATIONS
INFRARED RADIATION
ISOLATED VALUES
NOISE
RADIANT FLUX DENSITY
RADIATION DETECTION
SENSITIVITY
STRESSES
ULTRALOW TEMPERATURE
DATA
DATA FORMS
DETECTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FLUX DENSITY
INFORMATION
METALS
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATIONS
VARIATIONS
360603* - Materials- Properties