Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Development of high-efficiency solar cells on silicon web. Sixth quarterly progress report, July-September 1985

Technical Report ·
OSTI ID:6407352
This sixth quarterly report describes the results of cross-sectional TEM measurements along with LBIC and DLTS measurements on baseline high-efficiency and low-efficiency web cells. These techniques afford a means for examining the structural and electrical quality of the dendritic web silicon as a function of depth. The electrical activity of the twin planes is of particular interest. Also described are the results of hydrogen ion implantation into partially processed and into completed web cells in an effort to passivate defects. Other topics include the surface damage introduced by beveling web silicon with Syton, the achievement of hole diffusion lengths exceeding 100 ..mu..m in relatively low-resistivity n-base cells, and the effect of significantly reducing the dissolved oxygen concentration of web material.
Research Organization:
Westinghouse Research and Development Center, Pittsburgh, PA (USA)
DOE Contract Number:
NAS-7-100-956786
OSTI ID:
6407352
Report Number(s):
DOE/JPL/956786-85/6; ON: DE86003326
Country of Publication:
United States
Language:
English