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U.S. Department of Energy
Office of Scientific and Technical Information

Development of high-efficiency solar cells on silicon web. Seventh quarterly progress report, October 1-December 31, 1985

Technical Report ·
OSTI ID:5917766
The seventh quarterly report describes the results of work aimed at identifying and reducing sources of carrier recombination both in the starting web silicon material and in the processed cells. Cross-sectional TEM measurements of several web cells have been made and analyzed. The effect of the heavily twinned region on cell efficiency has been modeled, and the modeling results compared to measured values for processed cells. The effects of low-energy, high-dose hydrogen ion implantation on cell efficiency and diffusion length have been examined. Cells have been fabricated from web silicon known to have a high diffusion length, with a new double-layer antireflection coating being applied to these cells. A new contact system, to be used with oxide-passivated cells and which greatly reduces the area of contact between metal and silicon, has been designed. Finally, the application of DLTS measurements to beveled samples has been further investigated.
Research Organization:
Westinghouse Research and Development Center, Pittsburgh, PA (USA)
DOE Contract Number:
NAS-7-100-956786
OSTI ID:
5917766
Report Number(s):
DOE/NBM-6009522; ON: DE86009522
Country of Publication:
United States
Language:
English