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Performance and stability of Si:H p[endash]i[endash]n solar cells with [ital i] layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.124752· OSTI ID:6407144
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  1. Center for Thin Film Devices, Electrical Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Systematic studies have been carried out on the transition from the amorphous to the microcrystalline phase in intrinsic Si:H as a function of the accumulated film thickness and the effect of this transition on p[endash]i[endash]n solar cell performance [J. Koh, Y. Lee, H. Fujiwara, C. R. Wronski, and R. W. Collins, Appl. Phys. Lett. [bold 73], 1526 (1998)]. Guided by a deposition phase diagram obtained from real-time spectroscopic ellipsometry, cell structures having [ital i] layers deposited with different H[sub 2]-dilution levels and thicknesses were investigated. For these structures, the fill factors are controlled by the bulk [ital i] layers. From the systematic changes in the fill factors, specifically their initial and degraded steady-state values and their degradation kinetics, the effects of the transition from the amorphous to the microcrystalline phase within the Si:H layers are identified, and insights are obtained into the properties of these structurally graded materials. [copyright] [ital 1999 American Institute of Physics.]
OSTI ID:
6407144
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 75:11; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English