Oxidation of silicon, silicon carbide, and silicon nitride in gases containing oxygen and chlorine

Journal Article · Tue Jun 01 04:00:00 EDT 1993 · Journal of the American Ceramic Society; (United States)

DOI:https://doi.org/10.1111/j.1151-2916.1993.tb03952.x· OSTI ID:6401617

Hsu, PeiPei; Ip, Sikyin; Park, Chan; McNallan, M J ^[1]

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1. Univ. of Illinois, Chicago (United States)

Chlorine contamination accelerates the oxidation of silicon-based ceramics through the formation of volatile silicon chloride or silicon oxychloride species which degrade the protective character of the SiO[sub 2] film. Accelerated attack may occur by active corrosion or formation of bubbles in the oxide layer. Si[sub 3]N[sub 4] is much more resistant to this attack than either silicon or SiC. This resistance may be related to the presence of a thin silicon oxynitride layer below the SiO[sub 2] scale which forms on Si[sub 3]N[sub 4].

• OSTI ID: 6401617
• Journal Information: Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 76:6; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360205* -- Ceramics
Cermets
& Refractories-- Corrosion & Erosion
BUBBLES
CARBIDES
CARBON COMPOUNDS
CERAMICS
CHEMICAL REACTIONS
CHLORIDES
CHLORINE
CHLORINE COMPOUNDS
CORROSION RESISTANCE
ELEMENTS
HALIDES
HALOGEN COMPOUNDS
HALOGENS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
OXIDATION
PNICTIDES
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON CHLORIDES
SILICON COMPOUNDS
SILICON HALIDES
SILICON NITRIDES