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Photoelectronic properties of II-VI heterojunctions. Progress report No. 3, March 1, 1978--February 28, 1979

Technical Report ·
OSTI ID:6399964
Research on four principal problem areas is described in detail: (1) properties of heterojunctions formed by rf sputtering of indium--tin oxide (ITO) on single crystal p-type CdTe, together with information on CdTe surfaces and In/CdTe Schottky barriers; (2) the preparation of ZnO films by spray pyrolysis with good optical and electrical properties for the preparation of ZnO/CdTe heterojunctions; (3) the comparison of properties of Cu/sub x/S/CdS heterojunctions prepared by the dry process on thin-film CdS substrates with those prepared on single-crystal CdS substrates; and (4) initial exploration of electron microscopy of InSb/CdTe heterojunctions.
Research Organization:
Stanford Univ., CA (USA). Dept. of Materials Science and Engineering
OSTI ID:
6399964
Report Number(s):
SU-DMS-78-R-2
Country of Publication:
United States
Language:
English

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