Effect of a tilted magnetic field on the anomalous H=0 conducting phase in high-mobility Si MOSFET{close_quote}s

Journal Article · Sat Aug 01 04:00:00 EDT 1998 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.58.3553· OSTI ID:639831

Kravchenko, S V; Simonian, D; Sarachik, M P ^[1]; Kent, A D ^[2]; Pudalov, V M ^[3]

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1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
2. Department of Physics, New York University, New York, New York 10003 (United States)
3. Institute for High Pressure Physics, Troitsk, 142092 Moscow District (Russia)

The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon metal-oxide-semiconductor field-effect transistors is independent of the angle between the field and the plane of the two-dimensional electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered GaAs/Al{sub x}Ga{sub 1{minus}x}As heterostructures: the system is insulating in zero (perpendicular) field, and exhibits reentrant insulator{endash}quantum-Hall-effect{endash}insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-T phase is related only to the electrons{close_quote} spin. {copyright} {ital 1998} {ital The American Physical Society}

• OSTI ID: 639831
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 58; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CARRIER MOBILITY
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
HALL EFFECT
MAGNETIC FIELDS
MAGNETORESISTANCE
MOSFET
SILICON