An analytical threshold voltage and subthreshold current model for short-channel MESFET's

Journal Article · Mon Feb 01 04:00:00 EST 1993 · IEEE Journal of Solid-State Circuits (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/4.192050· OSTI ID:6386820

De, V K; Meindl, J D ^[1]

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1. Rensselaer Polytechnic Inst., Troy, NY (United States)

Short-channel effects on the subthreshold behavior are modeled in self-aligned gate MESFET's with updoped substrates through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant potential solution, simple and accurate analytical expressions for short-channel threshold voltage, subthreshold swing, and subthreshold drain current are derived. These are then used to develop an expression for minimum acceptable channel length. A comparative study of the short-channel effects in MESFET's with doped and undoped substrates indicates that channel lengths will be limited to 0.15-0.2 [mu]m by subthreshold conduction. Besides offering insight into the device physics of the short-channel effects in MESFET's, the model provides a useful basis for accurate analysis and simulation of small-geometry GaAs MESFET digital circuits.

• OSTI ID: 6386820
• Journal Information: IEEE Journal of Solid-State Circuits (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Solid-State Circuits (Institute of Electrical and Electronics Engineers); (United States) Vol. 28:2; ISSN IJSCBC; ISSN 0018-9200
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ANALYTICAL SOLUTION
COMPARATIVE EVALUATIONS
CURRENTS
DIFFERENTIAL EQUATIONS
DIGITAL CIRCUITS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
EQUATIONS
EVALUATION
FIELD EFFECT TRANSISTORS
MATHEMATICAL MODELS
PARTIAL DIFFERENTIAL EQUATIONS
PHYSICAL PROPERTIES
POISSON EQUATION
SEMICONDUCTOR DEVICES
SUBSTRATES
THRESHOLD CURRENT
TRANSISTORS