High peak power picosecond pulse generation from AlGaAs external cavity mode-locked semiconductor laser and traveling-wave amplifier

Journal Article · Mon Sep 03 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103529· OSTI ID:6376662

Delfyett, P J; Lee, C ^[1]; Alphonse, G A; Connolly, J C ^[2]

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1. Bell Communications Research, Red Bank, NJ (USA)
2. David Sarnoff Research Center, Princeton, NJ (USA)

Thin active region single stripe aluminum gallium arsenide traveling-wave amplifiers have been used to generate and amplify 15 ps optical pulses to nearly 50 mW average powers and to peak powers in excess of 3 W. No appreciable temporal pulse distortion is observed after amplification. These peak power levels should prove to be sufficient to induce nonlinear optical effects in fibers.

• OSTI ID: 6376662
• Journal Information: Applied Physics Letters; (USA), Vol. 57:10; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
AMPLIFIERS
MODE LOCKING
ALUMINIUM ARSENIDES
ANTIREFLECTION COATINGS
GALLIUM ARSENIDES
LASER CAVITIES
NONLINEAR OPTICS
PULSES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
LASERS
OPTICS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)