Pulse energy gain saturation in subpico- and picosecond pulse amplification by a traveling-wave semiconductor laser amplifier

Journal Article · Sun Oct 01 04:00:00 EDT 1989 · IEEE Photonics Technology Letters; (USA)

DOI:https://doi.org/10.1109/68.43354· OSTI ID:5648775

Saitoh, T; Mukai, T ^[1]; Itoh, H; Noguchi, Y; Sudo, S ^[2]

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1. NTT Basic Research Labs., 3-9-11 Midori-cho, Musashino-shi, Tokyo (JP)
2. NTT Opto-Electronics Labs., 3-1 Morinosato Wakamiya, Atsugi-chi, Kanagawa (JP)

Optical pulses with durations ranging from 0.49 to 21 ps are amplified by a traveling-wave semiconductor laser amplifier. The pulse energy gain is determined by pulse energy only. The dependence of pulse energy gain on output pulse energy does not change in the pulse duration range. In this paper the saturation characteristics are successfully explained by a four-level system model.

• OSTI ID: 5648775
• Journal Information: IEEE Photonics Technology Letters; (USA), Journal Name: IEEE Photonics Technology Letters; (USA) Vol. 1:10; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
AMPLIFIERS
ELECTRONIC EQUIPMENT
ENERGY SPECTRA
EQUIPMENT
GAIN
LASERS
OPTICAL SYSTEMS
PULSE AMPLIFIERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
TRAVELLING WAVES