Influence of doping of Ga/sub 0. 68/Al/sub 0. 32/As on its cathodoluminescence and threshold current density of a laser pumped by an electron beam
A study was made of the influence of doping of Ga/sub 0.68/Al/sub 0.32/As solid solutions with tellurium (from 5 x 10/sup 16/ to 1 x 10/sup 18/ cm/sup -3/) or zinc (from 4 x 10/sup 17/ to 1 x 10/sup 19/ cm/sup -3/) on the radiative characteristics. The cathodoluminescence intensity and the threshold current density of an electron-beam-pumped laser deteriorated greatly as a result of doping with tellurium in amounts in excess of 3 x 10/sup 17/ cm/sup -3/. This was attributed to a nonradiative recombination channel in which an impurity level or a band associated with an indirect L minimum of the conduction band participated. In the case of zinc doping the cathodoluminescence intensity and the threshold current density of a laser were practically indepedent of the dopant concentration. The zinc-doped samples had a lower threshold current density (50 mA/cm/sup 2/ at T = 90 /sup 0/K and 0.9A/cm/sup 2/ at T = 300 /sup 0/K) than the samples with n-type conduction.
- Research Organization:
- All-Union Scientific-Research Institute of Metrological Service, Moscow
- OSTI ID:
- 6371241
- Journal Information:
- Sov. J. Quant. Electron. (Engl. Transl.); (United States), Vol. 11:1
- Country of Publication:
- United States
- Language:
- English
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