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IR, optical, and electron-spin-resonance study of as-deposited and annealed a-Ge/sub 1-//sub x/C/sub x/:H prepared by rf sputtering in Ar/H/sub 2//C/sub 3/H/sub 8/

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.339710· OSTI ID:6369624
Hydrogenated amorphous germanium carbide (a-Ge/sub 1-//sub x/C/sub x/:H ) films were prepared by rf sputtering, at various rf power levels and mixtures of Ar, H/sub 2/, and propane. As in the case of a-Si:H rf sputtered under similar conditions, the concentration of Ge--H bond, as determined by the IR absorption spectra, and the Tauc determined optical gap, generally increase as the rf power is decreased. The optical gap of the a-Ge/sub 1-//sub x/C/sub x/:H films range from 0.85--2.3 eV, and the electron-spin-resonance defect spin densities from 6.5 x 10/sup 17/ to 3 x 10/sup 18/ spins/cm/sup 3/. Auger spectroscopy was used to determine the C/Ge ratio and indicated that in most of the samples, this ratio was approx. <0.15. Isochronal annealing up to 400 /sup 0/C indicated that (i) Ge-C segregation effects already initiated at 100 /sup 0/C are greatly enhanced above 300 /sup 0/C, (ii) at 300 /sup 0/C C--H bonds are formed at the expense of Ge--H ones, and (iii) all of the hydrogen bonded to Ge and most of that bonded to carbon evolve out of the sample at or slightly below 400 /sup 0/C.
Research Organization:
Ames Laboratory: U.S. Department of Energy and Department of Physics, Iowa State University, Ames, Iowa 50011
DOE Contract Number:
W-7405-ENG-82
OSTI ID:
6369624
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:3; ISSN JAPIA
Country of Publication:
United States
Language:
English