Electron energy-loss studies on radio frequency sputtered a-Ge/sub 1-//sub x/C/sub x/:H films
Valence-band and core level electron energy-loss spectroscopy (EELS) were used to study rf sputter deposited hydrogenerated amorphous germanium carbide films (a-Ge/sub 1-//sub x/C/sub x/:H, 0less than or equal toxless than or equal to1). The optical gap of the films ranged from 0.8--1.0 eV in a-Ge:H to 1.2--2.3 eV in a-C:H. Valence-band EELS of clean sputter etched a-Ge and a-Ge:H films (x = 0), as compared to that of Ar sputter etched Ge(111) and hydrogen covered single crystals of Ge, respectively, indicated preferential sputtering of hydrogen by Ar ions, in contrast to recent observations on rf sputter deposited a-Si:H, where Ar etching did not cause complete depletion of hydrogen from the surface. In a-Ge/sub 1-//sub x/C/sub x/:H alloy films (0
- Research Organization:
- Microelectronics Research Center, Department of Physics and Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011
- OSTI ID:
- 6166898
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 5:5; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ARGON IONS
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CHEMICAL REACTIONS
CLEANING
COLLISIONS
CONTAMINATION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY GAP
ENERGY-LOSS SPECTROSCOPY
GERMANIUM CARBIDES
GERMANIUM COMPOUNDS
HYDROGEN
HYDROGENATION
IMPURITIES
ION COLLISIONS
IONS
NONMETALS
SPECTROSCOPY
SPUTTERING
SURFACE CLEANING
SURFACE CONTAMINATION
SURFACE FINISHING