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Monomolecular stages of pyrolysis of the SiH/sub 4/ + N/sub 2/O mixture during deposition of silicon dioxide layers

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6368138
;
The dependence of the rate of deposition of silicon dioxide layers on the total pressure in the reactor was established. It was shown that activation of monosilane molecules takes place on collision in the gas phase. A scheme of the processes in the gas phase and on the surface which take place during deposition of the layers is proposed
OSTI ID:
6368138
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:12; ISSN INOMA
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400800 -- Combustion
Pyrolysis
& High-Temperature Chemistry
ACTIVATION ENERGY
ARGON
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COLLISIONS
DECOMPOSITION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
EPITAXY
FLUIDS
GASES
HELIUM
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
MOLECULE COLLISIONS
MOLECULE-MOLECULE COLLISIONS
NITROGEN COMPOUNDS
NITROGEN OXIDES
NITROUS OXIDE
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PRESSURE DEPENDENCE
PYROLYSIS
RARE GASES
REACTION KINETICS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
THERMOCHEMICAL PROCESSES
VAPOR PHASE EPITAXY