Modeling high-density-plasma deposition of SiO{sub 2} in SiH{sub 4}/O{sub 2}/Ar
- Sandia National Labs., Livermore, CA (United States)
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of California, Santa Barbara, CA (United States)
The authors have compiled sets of gas-phase and surface reactions for use in modeling plasma-enhanced chemical vapor deposition of silicon dioxide from silane, oxygen and argon gas mixtures in high-density-plasma reactors. They have applied the reaction mechanisms to modeling three different kinds of high-density plasma deposition chambers, and tested them by comparing model predictions to a variety of experimental measurements. The model simulates a well mixed reactor by solving global conservation equations averaged across the reactor volume. The gas-phase reaction mechanism builds from fundamental electron-impact cross section data available in the literature, and also includes neutral-molecule, ion-ion, and ion-molecule reaction paths. The surface reaction mechanism is based on insight from attenuated total-reflection Fourier-transform infrared spectroscopy experiments. This mechanism describes the adsorption of radical species on an oxide surface, ion-enhanced reactions leading to species desorption from the surface layer, radical abstractions competing for surface sites, and direct energy-dependent ion sputtering of the oxide material. Experimental measurements of total ion densities, relative radical densities as functions of plasma operating conditions, and net deposition-rate have been compared to model predictions to test and modify the chemical kinetics mechanisms. Results show good quantitative agreement between model predictions and experimental measurements.
- Research Organization:
- Sandia National Labs., Livermore, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 495824
- Report Number(s):
- SAND--97-8241; ON: DE97007010
- Country of Publication:
- United States
- Language:
- English
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