Shadow projection mask for ion implantation and ion beam lithography

Patent · Tue May 15 04:00:00 EDT 1984

OSTI ID:6366844

Bohlen, H; Greschner, J; Nehmiz, P

A projection mask comprises a thin P/sup +/-doped silicon layer with through holes adapted to the mask pattern, a grid supporting this layer having silicon ribs. On at least on its side facing away from the grid, the layer has a layer, which is at least as thick as to prevent the implanting of ions in the silicon layer. At least the mask surface exposed to ion irradiation is electrically and thermally conductive, and mechanically resistant. The coating of the silicon frame of the mask is such that it does not cause any mask deformation caused by temperature and/or through inherent tensions of the coating. Preferred absorbing materials are gold, silver, platinum, tungsten, and tantalum, and mechanically resistant materials are preferably carbon, molybdenum, titanium, tungsten, and tantalum. In operation, the mask with grid is placed onto the substrate to be irradiated, and subsequently blanket-illuminated with an ion beam, or scanned line-by-line until each point on the mask has been covered by the beam path.

• Assignee: International Business Machines Corporation
• Patent Number(s): US 4448865
• OSTI ID: 6366844
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BEAMS
CARBON
COATINGS
DESIGN
DOPED MATERIALS
ELEMENTS
FILMS
GOLD
ION BEAMS
ION IMPLANTATION
IRRADIATION
LAYERS
MASKING
MATERIALS
METALS
MOLYBDENUM
NONMETALS
OPENINGS
PLATINUM
PLATINUM METALS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILVER
SUBSTRATES
TANTALUM
THIN FILMS
TITANIUM
TRANSITION ELEMENTS
TUNGSTEN