Plasma formed ion beam projection lithography system

Patent · Tue Jan 01 04:00:00 EST 2002

OSTI ID:874902

Leung, Ka-Ngo ^[1]; Lee, Yung-Hee Yvette ^[2]; Ngo, Vinh ^[3]; Zahir, Nastaran ^[4]

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1. Hercules, CA
2. Berkeley, CA
3. San Jose, CA
4. Greenbrae, CA

A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
• DOE Contract Number: AC03-76SF00098
• Assignee: The Regents of the University of California (Oakland, CA)
• Patent Number(s): US 6486480
• OSTI ID: 874902
• Country of Publication: United States
• Language: English

Related Subjects

/250/
30
acceleration
beam
beam passes
coated
conventional
electrode
eliminates
energy
entire
extracted
extraction
formed
forming
heating
illuminated
ion-beam
ipl
lithography
mask
minimizing
pass
passes
plasma
plasma formed
plasma-formed
positioned
projection
reduction
resist
scattering
source
sputtering
stage
stencil
thicker
uniformly
wafer