Lasing wavelength of an asymmetric double quantum well laser diode

Journal Article · Mon Jul 27 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98477· OSTI ID:6364117

Tokuda, Y; Matsui, T; Fujiwara, K; Tsukada, N; Nakayama, T

It is demonstrated that in an asymmetric coupled GaAs double quantum well structure, we are able to choose a lasing wavelength out of at least four quantum state transitions by cavity loss control. The assignments of the observed lasing transitions are determined by photoluminescence measurement for the laser wafer, as well as by calculations using an isolated potential well model. We propose that one can realize wide-range wavelength tuning and multistep wavelength switching functions by modifying the two-dimensional density of states.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan
• OSTI ID: 6364117
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
ELECTRICAL EQUIPMENT
ENERGY-LEVEL DENSITY
EQUIPMENT
FREQUENCY SELECTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LUMINESCENCE
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SWITCHES
TUNING