Carrier-induced lasing wavelength shift for quantum well laser diodes

Journal Article · Wed Jul 01 04:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073481· OSTI ID:6422856

Tomita, A; Suzuki, A

Lasing wavelength was analyzed for quantum well laser diodes (QW-LD's) considering both the bandgap shrinkage effect and the band-filling effect. The bandgap shrinkage effect was calculated by the local density functional method, treating both electron and hole distribution self-consistently. Assuming no k-selection rule, the band-filling effect is larger than the bandgap shrinking effect when the carrier density is high. The lasing wavelength shifts to the short side as the threshold carrier density increases. QW-LD's with a large threshold carrier density lase at very short wavelength corresponding to the transition between the second sublevel. However, this wavelength is still longer than that expected because of the bandgap shrinkage effect.

• Research Organization: Opto-Electronics Research Labs., NEC Corp., 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 213
• OSTI ID: 6422856
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:7; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CARRIER DENSITY
CURRENTS
ELECTRIC CURRENTS
GRADED BAND GAPS
LASERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SHRINKAGE
THRESHOLD CURRENT
WAVELENGTHS