Localization of degradation in InP/InGaAsP mushroom stripe lasers

Journal Article · Mon Jul 13 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98600· OSTI ID:6364064

Jung, H; Marschall, P

The rapid degradation observed in InP/InGaAsP mushroom stripe lasers covered with phosphosilicate glass (PSG) was investigated by comparing the light-current characteristics as a function of the preparation technique. We were able to show that the PSG-covering layer is not the reason for the rapid degradation. By inspecting the light-current characteristics before and after degradation and by additional underetching the laser structure after degradation we were able to localize the degraded regions on the open side walls of the InGaAsP active layer.

• Research Organization: AEG Aktiengesellschaft, Forschungsinstitut Ulm, Sedanstrasse 10, D-7900 Ulm, West Germany
• OSTI ID: 6364064
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 51:2
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
PERFORMANCE
COVERINGS
ETCHING
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
GLASS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)