Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

Journal Article · Fri Mar 01 04:00:00 EST 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.334466· OSTI ID:6362757

Ueda, O; Wakao, K; Yamaguchi, A; Isozumi, S; Komiya, S

Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

• Research Organization: Fujitsu Laboratories Ltd., 1677 Ono, Atsugi 243-01, Japan
• OSTI ID: 6362757
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)