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U.S. Department of Energy
Office of Scientific and Technical Information

Hardened technologies for hazardous environments

Conference ·
OSTI ID:6362218

The complete radiation environment of neutrons, total dose, transient ionizing radiation, and energetic cosmic rays (SEU) can have various deleterious effects upon semiconductor electronic components. However, hardening techniques for these radiation effects have been developed for the various semiconduct technologies that will permit their use even in severe radiation environments. The process techniques are occasionally line dependent and may require modification to achieve the desired hardness goal. Similarly, hardening semiconductor components for elevated thermal operation can be achieved with process techniques which, unlike the radiation case, are readily transferable between process lines. Radiation effects and hardening technologies are discussed for Metal Oxide Semiconductor (MOS), Bipolar, Junction Field Effect Transistors (JFET), Metal Semiconductor Field Effect Transistor (MESFET), Diode, Electro-optic, and crystal technologies. 44 refs., 44 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6362218
Report Number(s):
SAND-87-1004C; CONF-870724-15; ON: DE87008655
Country of Publication:
United States
Language:
English