Hardened technologies for hazardous environments
The complete radiation environment of neutrons, total dose, transient ionizing radiation, and energetic cosmic rays (SEU) can have various deleterious effects upon semiconductor electronic components. However, hardening techniques for these radiation effects have been developed for the various semiconduct technologies that will permit their use even in severe radiation environments. The process techniques are occasionally line dependent and may require modification to achieve the desired hardness goal. Similarly, hardening semiconductor components for elevated thermal operation can be achieved with process techniques which, unlike the radiation case, are readily transferable between process lines. Radiation effects and hardening technologies are discussed for Metal Oxide Semiconductor (MOS), Bipolar, Junction Field Effect Transistors (JFET), Metal Semiconductor Field Effect Transistor (MESFET), Diode, Electro-optic, and crystal technologies. 44 refs., 44 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6362218
- Report Number(s):
- SAND-87-1004C; CONF-870724-15; ON: DE87008655
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
COSMIC RADIATION
CRYSTALS
DESIGN
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
HARDENING
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
NEUTRON FLUX
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION FLUX
RADIATION HARDENING
RADIATION SOURCES
RADIATIONS
RELIABILITY
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE EFFECTS
X RADIATION