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Tracer diffusion in pure and boron-doped Ni/sub 3/Al

Journal Article · · Acta Metall.; (United States)
Diffusion of /sup 63/Ni has been measured in pure and boron-doped polycrystalline Ni/sub 3/Al intermetallic compounds as a function of temperature (692-1352/sup 0/C), Al concentration (24-26 at.%Al), and boron content (0-500 wt ppm). Volume and grain-boundary diffusion of /sup 60/Co and /sup 68/Ge have also been measured in pure Ni/sub 3/Al. Both conventional grinding and ion beam sputtering techniques have been used for the determination of the concentration profiles. The diffusivity of Ni,D*/sub Ni/ is independent of Al content above 1000/sup 0/C, indicating that antisite defects are prevailing on both sides of stoichiometry. However, D*/sub Ni/ shows a minimum at the stoichiometric composition below 1000/sup 0/C, and this trend becomes clearer with decreasing temperature. The diffusivities of /sup 60/Co and /sup 68/Ge are also independent of Al concentration in the temperature range between 880 and 1200/sup 0/C, but their grain-boundary diffusion depends on Al concentration. The addition of boron linearly increases D*/sub Ni/ above 1000/sup 0/C, but at lower temperatures, D*/sub Ni/ in off-stoichiometric compositions decreases to the value for stoichiometric Ni/sub 3/Al on the addition of 100 wt ppm boron, and then increases as above with the further additions of boron to -- 500 wt ppm. The present diffusion data suggest that a small concentration of vacancies, independent of temperature, is present on both sides of, and at, stoichiometry at low temperature.
Research Organization:
Mitsui Mining and Smelting, Central Research Lab., Saitama (JP)
OSTI ID:
6359219
Journal Information:
Acta Metall.; (United States), Journal Name: Acta Metall.; (United States) Vol. 36:5; ISSN AMETA
Country of Publication:
United States
Language:
English

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