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Sintering kinetics of pure and doped boron carbide. Final technical report

Technical Report ·
DOI:https://doi.org/10.2172/6480379· OSTI ID:6480379
The sintering of pure and doped boron carbide was investigated over the temperature range 1898/sup 0/ to 2380/sup 0/K and at additive levels ranging from 0.75 to 10.0 wt%. The addition of 0.75 and 3.8 wt% of AlF/sub 3/, Ni, Fe, and Cu resulted in a deactivation in the sintering of boron carbide at all temperatures. In contrast, the addition of 10.0 wt% of these dopants resulted in enhanced shrinkage in B/sub 4/C for the temperatures 1898m and 2133/sup 0/K. At the highest temperature, 2380/sup 0/K, the addition of AlF/sub 3/ at the 10.0 wt% level was the only case where enhanced shrinkage was observed. X-ray analysis showed the formation of a B/sub 12/C/sub 2/Al compound and the total release of the fluorine. These results are interpreted in terms of a grain-boundary diffusion process for pure and doped boron carbide.
Research Organization:
California Univ., Davis (USA). Dept. of Mechanical Engineering
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6480379
Report Number(s):
UCRL-13894
Country of Publication:
United States
Language:
English