A silicon drift photodiode
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6359212
A low capacitance photodiode based on the principle of the solid state drift chamber has been constructed and tested. The device is based on a cellular design with an anode at the centre of each of five cells allowing electrons liberated by ionisation to drift up to 1mm to the read out strip. Results on the performance of the detector, including leakage current, capacitance and drift properties, are presented and compared with simulations.
- Research Organization:
- Senter for Industriforskning, Oslo (NO); Blackett Lab., Imperial College, London (GB); Ame A/S, Horten (NO)
- OSTI ID:
- 6359212
- Report Number(s):
- CONF-881103-
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: 36:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
COMPARATIVE EVALUATIONS
CURRENTS
DESIGN
DRIFT CHAMBERS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
IONIZATION
LEAKAGE CURRENT
LEPTONS
MEASURING INSTRUMENTS
MULTIWIRE PROPORTIONAL CHAMBERS
PERFORMANCE
PHOTOIONIZATION
PHYSICAL PROPERTIES
PROPORTIONAL COUNTERS
RADIATION DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON DIODES
SIMULATION
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
COMPARATIVE EVALUATIONS
CURRENTS
DESIGN
DRIFT CHAMBERS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
IONIZATION
LEAKAGE CURRENT
LEPTONS
MEASURING INSTRUMENTS
MULTIWIRE PROPORTIONAL CHAMBERS
PERFORMANCE
PHOTOIONIZATION
PHYSICAL PROPERTIES
PROPORTIONAL COUNTERS
RADIATION DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON DIODES
SIMULATION