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A silicon drift photodiode

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6359212
A low capacitance photodiode based on the principle of the solid state drift chamber has been constructed and tested. The device is based on a cellular design with an anode at the centre of each of five cells allowing electrons liberated by ionisation to drift up to 1mm to the read out strip. Results on the performance of the detector, including leakage current, capacitance and drift properties, are presented and compared with simulations.
Research Organization:
Senter for Industriforskning, Oslo (NO); Blackett Lab., Imperial College, London (GB); Ame A/S, Horten (NO)
OSTI ID:
6359212
Report Number(s):
CONF-881103-
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: 36:1
Country of Publication:
United States
Language:
English