Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.225563· OSTI ID:6343082

Ren, F; Abernathy, C R; Pearton, S J; Lothian, J R; Wisk, P W; Fullowan, T R; Chen, Youngkai ^[1]; Yang, L W; Fu, S T; Brozovich, R S ^[2]

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1. AT and T Bell Labs., Murray Hill, NJ (United States)
2. General Electric Co., Syracuse, NY (USSR)

As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBT's) for microwave applications, InGaP/ GaAs HBT's with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) are demonstrated with excellent dc, RF, and microwave performance. As previously reported, with a 700-[angstrom]-thick base layer (135-[Omega]/[open square] sheet resistance), a dc current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2 [times] 5-[mu]m[sup 2] emitter area device. A device with 12 cells, each consisting of a 2 [times] 15-[mu] m[sup 2] emitter area device for a total emitter area of 360 [mu] m[sup 2], was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50%.

• OSTI ID: 6343082
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 14:7; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTION TRANSISTORS
JUNCTIONS
MICROWAVE EQUIPMENT
MOLECULAR BEAM EPITAXY
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS