Optical depth profiling of band gap engineered interfaces in amorphous silicon solar cells at monolayer resolution
- Department of Physics and Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- IBM Microelectronics Division, Essex Junction, Vermont 05452 (United States)
Real time spectroellipsometry and a two-layer optical analysis have been applied to obtain alloy composition (x) and optical gap (E{sub g}) depth profiles with {approximately}3thinsp{Angstrom} resolution and sensitivities better than {plus_minus}0.01 in x and {plus_minus}0.02thinspeV in E{sub g} for graded amorphous semiconductor alloy thin films prepared by plasma-enhanced chemical vapor deposition. Graded amorphous silicon{endash}carbon alloy (a-Si{sub 1{minus}x}C{sub x}:H) layers incorporated at the i{endash}p interfaces of a-Si:H n-i-p solar cells have been studied using these methods, and the layer characteristics have been related to improvements in solar cell performance. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 634193
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 72; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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