Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Annealing of heavy ion irradiated Nb/sub 3/Ge films

Conference · · IEEE Trans. Magn.; (United States)
OSTI ID:6340967
High T /SUB c/ Nb/sub 3/Ge films prepared by coevaporation have been irradiated by 20 MeV sulfur ions at low temperatures (< 25 K). X-ray analysis showed an expansion of the A15 lattice and an increasing degree of amorphicity, while T /SUB c/ vs. dose decreased from 22 K to 4.3 K with a slight minimum of about 70 mK depth at /PHI/t about 3 . 10/sup 15/ cm/sup -2/ before saturation. - Films irradiated by doses up to less than or equal to 1.5 . 10/sup 15/ cm/sup -2/ could be annealed to the pre-irradiation T /SUB c/ . In contrast, strong irradiation led to an (X-ray-) amorphous structure, from which T /SUB c/ values of only 15-17 K could be recovered, similar to the results obtained for amorphous NbGe films condensed at LN/sub 2/ temperature. - The behaviour of the film resistivity during the heat treatment indicates that for films irradiated by low doses only lattice defects anneal, whereas for high dose damaged films recrystallization from the amorphous state occurs.
Research Organization:
Kernforschungszentrum Karlsruhe, Institut fur Technische Physik, and Universitat Karlsruhe, Karlsruhe
OSTI ID:
6340967
Report Number(s):
CONF-840937-
Conference Information:
Journal Name: IEEE Trans. Magn.; (United States) Journal Volume: MAG-21:2
Country of Publication:
United States
Language:
English