Reduced bias growth of pure-phase cubic boron nitride
- Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120 (United States)
We report results on an improved growth process for cubic boron nitride (c-BN) films. The films are deposited on a dc-biased silicon substrate using ion-assisted sputtering. First, we grow a BN template layer at a bias voltage which maximizes the sp{sup 3} content. After this template layer attains a thickness of {approximately}500 {Angstrom}, corresponding to the coalescence of the mosaiclike grain structure, we find that we can reduce the substrate bias to about 50{percent} of its initial value while sustaining pure phase c-BN growth. The reduction in nitrogen ion energy results in a dramatic increase in the growth rate as well as significantly improved film quality. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 633972
- Journal Information:
- Applied Physics Letters, Vol. 71, Issue 14; Other Information: PBD: Oct 1997
- Country of Publication:
- United States
- Language:
- English
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