Preparation of cubic boron nitride films by RF bias sputtering

Conference · Sat Jul 01 04:00:00 EDT 1995

OSTI ID:223670

Tsuda, Osamu; Yamada, Yukiko; Tatebayashi, Yoshinao ^[1]

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1. Univ. of Tokyo (Japan); and others

Cubic boron nitride (cBN) films were successfully prepared by the phase-regulated rf bias sputtering with the aid of magnetic field. The effects of the substrate bias voltage (V{sub s}), the working gas pressure (p) and the deposition time were investigated systematically. Cubic phase was formed in the filmed deposited with V{sub s} above the threshold which depended on p. Even at p = 0.4 mTorr, cBN films were grown with V{sub s} above 100 V. The prepared cBN films had a double-layered structure which consists of an initially deposited layer of sp{sup 2} phase and a layer of cubic phase subsequently grown. The maximum growth rate of the cubic layer was estimated to be approximately 1 nm/s. Stress measurements of the cBN films were also carried out, revealing that the cBN films had compressive stress of a few GPa.

• Research Organization: International Union of Pure and Applied Chemistry; American Physical Society, New York, NY (United States)
• OSTI ID: 223670
• Report Number(s): CONF-950875--Vol.4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
CUBIC LATTICES
DEPOSITION
FILMS
SPUTTERING
STRESSES