Preparation of cubic boron nitride films by RF bias sputtering
- Univ. of Tokyo (Japan); and others
Cubic boron nitride (cBN) films were successfully prepared by the phase-regulated rf bias sputtering with the aid of magnetic field. The effects of the substrate bias voltage (V{sub s}), the working gas pressure (p) and the deposition time were investigated systematically. Cubic phase was formed in the filmed deposited with V{sub s} above the threshold which depended on p. Even at p = 0.4 mTorr, cBN films were grown with V{sub s} above 100 V. The prepared cBN films had a double-layered structure which consists of an initially deposited layer of sp{sup 2} phase and a layer of cubic phase subsequently grown. The maximum growth rate of the cubic layer was estimated to be approximately 1 nm/s. Stress measurements of the cBN films were also carried out, revealing that the cBN films had compressive stress of a few GPa.
- Research Organization:
- International Union of Pure and Applied Chemistry; American Physical Society, New York, NY (United States)
- OSTI ID:
- 223670
- Report Number(s):
- CONF-950875-Vol.4; TRN: 96:002548-0005
- Resource Relation:
- Conference: 12. international symposium on plasma chemistry, Minneapolis, MN (United States), 21-25 Aug 1995; Other Information: PBD: Jul 1995; Related Information: Is Part Of 12th International symposium on plasma chemistry. Proceedings, Volume 4; Heberlein, J.V.; Ernie, D.W.; Roberts, E.D. [eds.] [Minnesota Univ., Minneapolis, MN (United States)]; PB: 615 p.
- Country of Publication:
- United States
- Language:
- English
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