Electrical characteristics of metal-insulator-semiconductor diodes with ZrO/sub 2//SiO/sub 2/ dielectric films

Journal Article · Thu Jun 15 04:00:00 UTC 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343155· OSTI ID:6336878

Fukumoto, H; Morita, M; Osaka, Y

Thin films of ZrO/sub 2/ vacuum-deposited on Si(100) substrates were oxidized in dry O/sub 2/ at 800 /sup 0/C and then analyzed by infrared absorption and Auger electron spectroscopy. It was found that the SiO/sub 2/ layer was formed at the ZrO/sub 2//Si interface. Mo/ZrO/sub 2//SiO/sub 2//p-Si(100) metal-insulator-semiconductor diodes were electrically characterized. The static dielectric constant of the ZrO/sub 2/ layer decreases from 21.1 epsilon/sub 0/ to about 15.5 epsilon/sub 0/ due to the crystallization of amorphous ZrO/sub 2/ during the oxidation. The SiO/sub 2/ layer formed at the ZrO/sub 2//Si interface was found to lower the leakage current through the dielectric film.

• Research Organization: Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan
• OSTI ID: 6336878
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ABSORPTION SPECTROSCOPY
AUGER ELECTRON SPECTROSCOPY
CHALCOGENIDES
COHERENT SCATTERING
CURRENTS
DIELECTRIC PROPERTIES
DIFFRACTION
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
FILMS
INFRARED RADIATION
IONIZING RADIATIONS
LEAKAGE CURRENT
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
RADIATIONS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X RADIATION
X-RAY DIFFRACTION
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES