Dielectric SiO{sub 2}/ZrO{sub 2} distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method
- Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573 (Japan)
Reactive helicon-wave-excited-plasma sputtering method is shown to be a suitable technique for the fabrication of high reflectivity (R) distributed Bragg reflectors (DBRs), in particular, operating at the resonance wavelength of B excitons in ZnO (366.5 nm), utilizing quarter-wavelength multilayers of SiO{sub 2} and ZrO{sub 2} dielectric films. According to the surface-damage-free nature and proper stoichiometry controllability of the method, dense dielectric films exhibiting ideal refractive indices (1.46 for SiO{sub 2} and 2.10 for ZrO{sub 2} at 633 nm) and small root-mean-square values for the surface roughness (0.20 nm for SiO{sub 2} and 0.53 nm for ZrO{sub 2}) were deposited using Si and Zr targets and O{sub 2} gas at room temperature. Optical reflectance spectra of the SiO{sub 2}/ZrO{sub 2} DBRs agreed with those calculated using the optical multilayer film theory, and eight-pair DBR exhibited R higher than 99.5% at 366.5 nm and 82 nm stop bandwidth (R{>=}95%). The results indicate that the DBR can be used for the realization of polariton lasers using ZnO microcavities.
- OSTI ID:
- 20779128
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 88; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
DEPOSITION
DIELECTRIC MATERIALS
EXCITONS
HELICON WAVES
PLASMA
POLARONS
REFLECTIVITY
REFRACTIVE INDEX
RESONANCE
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPUTTERING
STOICHIOMETRY
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ULTRAVIOLET SPECTRA
WAVELENGTHS
ZINC OXIDES
ZIRCONIUM OXIDES