Si wafer bonded of a-Si/a-SiN{sub x} distributed Bragg reflectors for 1.55-{mu}m-wavelength vertical cavity surface emitting lasers

Journal Article · Mon Aug 15 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2009075· OSTI ID:20714042

Levallois, C; Le Corre, A; Loualiche, S; Dehaese, O; Folliot, H; Paranthoen, C; Thoumyre, F; Labbe, C ^[1]

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1. Centre National de la Recherche Scientifigue-Unite Mixte de Recherche 6082 Institut National des Sciences Appliquees-20 Avenue des Buttes de Coeesmes, F35043 Rennes Cedex (France)

Amorphous silicon (a-Si) and amorphous silicon nitride (a-SiN{sub x}) layers deposited by magnetron sputtering have been analyzed in order to determine their optical and surface properties. A large value of {approx}1.9 of index difference is found between these materials. Distributed Bragg reflectors (DBRs) based on these dielectric material quarter wave layers have been studied by optical measurements and confronted to theoretical calculations based on the transfer matrix method. A good agreement has been obtained between the experimental and expected reflectivities. A maximum reflectivity of 99.5% at 1.55 {mu}m and a large spectral bandwidth of 800 nm are reached with only four and a half periods of a-Si/a-SiN{sub x}. No variation of the DBR reflectivity has been observed with the time nor when annealed above 240 deg. C and stored during few months. This result allows us to use this DBR in a metallic bonding process to realize a vertical cavity surface emitting laser (VCSEL) with two dielectric a-Si/a-SiN{sub x} DBRs. This bonding method using AuIn{sub 2} as the bonding medium and Si substrate can be performed at a low temperature of 240 deg. C without damaging the optical properties of the microcavity. The active region used for this VCSEL is based on lattice-matched InGaAs/InGaAsP quantum wells and a laser emission has been obtained at room temperature on an optically pumped device.

• OSTI ID: 20714042
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 4; Other Information: DOI: 10.1063/1.2009075; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BONDING
BRAGG REFLECTION
DEPOSITION
DIELECTRIC MATERIALS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
LASERS
OPTICAL PUMPING
QUANTUM WELLS
REFLECTIVITY
REFRACTIVE INDEX
SEMICONDUCTOR MATERIALS
SILICON
SILICON NITRIDES
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TRANSFER MATRIX METHOD