Formation Mechanism of Nanotubes in GaN
Journal Article
·
· Physical Review Letters
- Lawrence Berkeley National Laboratory 62/203, Berkeley, California 94720 (United States)
A formation mechanism for so-called nanotube defects in GaN is proposed. It is shown that two related types of defects are formed: nanotubes and pinholes. Both start with V shaped facets on {l_brace}10{ovr 1}1{r_brace} polar planes. Slow growth rate on these polar planes and impurity poisoning of growth steps are suggested as being responsible for initiation of these defects. {copyright} {ital 1997} {ital The American Physical Society}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 632682
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 15 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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