Domain boundaries in epitaxial wurtzite GaN
- Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)
- Department of Physics, University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom)
Double positioning boundaries on {l_brace}1{bar 2}10{r_brace} and {l_brace}1{bar 1}00{r_brace} planes in wurtzite GaN epilayer grown by molecular beam epitaxy on {l_brace}{bar 1}{bar 1}{bar 1}{r_brace}B GaP are described. Transmission electron microscopy observations demonstrate that the {l_brace}1{bar 2}10{r_brace} boundary extending a short distance along the c axis is characterized by a displacement of 1/2{l_angle}10{bar 1}1{r_angle} and is associated with single growth faults in the basal plane. This boundary forms as a consequence of island coalescence. Conversely, the {l_brace}1{bar 1}00{r_brace} boundary originates at the epilayer/substrate interface and runs through the whole epilayer, while {bold g.R} analysis combined with high resolution electron microscopy suggests a displacement of 1/3n{l_angle}11{bar 2}0{r_angle} (n{gt}3) in the basal plane with an additional shift along {l_angle}0001{r_angle} of 1/n{l_angle}0001{r_angle}(n{gt}3). {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 495231
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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