Low pressure chemical vapor deposition of Si{sub 1{minus}x}Ge{sub x} films on SiO{sub 2}: Characterization and modeling
- Stanford Univ., CA (United States). Center for Integrated Systems
Deposition of silicon-germanium (Si{sub 1{minus}x}Ge{sub x}) thin films in a hot wall tubular low-pressure chemical vapor deposition (LPCVD) furnace using SiH{sub 4} and GeH{sub 4} at 100 mTorr with temperatures ranging from 297 to 650 C has been studied. The deposited films range from pure Si to pure Ge. The deposition rate behavior is presented. The apparent activation energy of deposition rate of Ge from GeH{sub 4} in reaction-rate limited regime was found to be 0.91 eV, and for the deposition of Si from SiH{sub 4} was found to be 1.7 eV. The relation between the GeH{sub 4} mole fraction in the gas phase during deposition and Ge atomic fraction in the film is described. A model based on the sticking probability of Si and Ge precursors on the surface is proposed to describe this relation. Applications of the Si{sub 1{minus}x}Ge{sub x} include heterojunction bipolar transistors, resonant tunneling diodes, modulation-doped field-effect transistors, quantum-well metal-oxide-semiconductor (MOS) FETs, infrared photodetectors used in fiber optics, gate electrodes for MOSFETs, polycrystalline thin film transistors, and high efficiency solar cells.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 63200
- Journal Information:
- Journal of the Electrochemical Society, Vol. 142, Issue 5; Other Information: PBD: May 1995
- Country of Publication:
- United States
- Language:
- English
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