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Nb/sub 3/Ge and Nb/sub 3/Sn films prepared by high-rate magnetron sputtering

Journal Article · · Adv. Cryog. Eng.; (United States)
Magnetron sputtering has been shown to produce Nb/sub 3/Sn films with properties equal to or better than that produced by other techniques. Deposition rate for a given pressure was roughly proportional to the applied power and should be extendable beyond the present maximum of 0.5 ..mu..m/min. Control of the microstructure should be possible by manipulation of the sputtering parameters to optimize films for particular applications. Nb/sub 3/Ge films have been routinely produced with T/sub c/ > 20.5 K and as high as 21.5 K (> 22 K resistive onset), by adjusting the target composition and adding controlled amounts of impurity gas, such as oxygen. There is no reason to expect that higher T/sub c/ cannot be achieved with further refinements in technique. Future experiments will include the effects of pressure, substrate temperature and type, and deposition rate on J/sub c/(H,T).
Research Organization:
Argonne National Lab., IL
OSTI ID:
6319409
Journal Information:
Adv. Cryog. Eng.; (United States), Journal Name: Adv. Cryog. Eng.; (United States) Vol. 24; ISSN ACYEA
Country of Publication:
United States
Language:
English